场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    FDMS7608S

    FDMS7608S

    MOSFET 2N-CH 30V 12A/15A POWER56

    Fairchild Semiconductor

    1,290
    FDMS7608S

    规格书

    PowerTrench® 8-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 15A 10mOhm @ 12A, 10V 3V @ 250µA 24nC @ 10V 1510pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    FDMS9620S

    FDMS9620S

    POWER FIELD-EFFECT TRANSISTOR, 7

    Fairchild Semiconductor

    234,000
    FDMS9620S

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
    FQS4900TF

    FQS4900TF

    MOSFET N/P-CH 60V/300V 8SOIC

    Fairchild Semiconductor

    34,750
    FQS4900TF

    规格书

    QFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel - 60V, 300V 1.3A, 300mA 550mOhm @ 650mA, 10V 1.95V @ 20mA 2.1nC @ 5V - 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDSS2407

    FDSS2407

    MOSFET 2N-CH 62V 3.3A 8SOIC

    Fairchild Semiconductor

    433,537
    FDSS2407

    规格书

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 62V 3.3A 110mOhm @ 3.3A, 10V 3V @ 250µA 4.3nC @ 5V 300pF @ 15V 2.27W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    FDSS2407_SB82086

    FDSS2407_SB82086

    MOSFET N-CH

    Fairchild Semiconductor

    1,669
    FDSS2407_SB82086

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMS3669S

    FDMS3669S

    MOSFET 2N-CH 30V 13A 8PQFN

    Fairchild Semiconductor

    1,778
    FDMS3669S

    规格书

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc) 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V 2.7V @ 250µA, 2.5V @ 1mA 24nC @ 10V, 34nC @ 10V 1605pF @ 15V, 2060pF @ 15V 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FDMS3668S

    FDMS3668S

    MOSFET 2N-CH 30V 13A/18A 8PQFN

    Fairchild Semiconductor

    243,995
    FDMS3668S

    规格书

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 18A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1765pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FDMD8900

    FDMD8900

    MOSFET 2N-CH 30V 19A/17A 12POWER

    Fairchild Semiconductor

    15,000
    FDMD8900

    规格书

    - 12-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 19A, 17A 4mOhm @ 19A, 10V 2.5V @ 250µA 35nC @ 10V 2605pF @ 15V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
    FDMS3602AS

    FDMS3602AS

    MOSFET 2N-CH 25V 15A/26A 8PQFN

    Fairchild Semiconductor

    9,000
    FDMS3602AS

    规格书

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 26A 5.6mOhm @ 15A, 10V 3V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FDMS3600AS

    FDMS3600AS

    MOSFET 2N-CH 25V 15A/30A 8PQFN

    Fairchild Semiconductor

    9,385
    FDMS3600AS

    规格书

    PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 30A 5.6mOhm @ 15A, 10V 2.7V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
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