场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    FD6M033N06

    FD6M033N06

    MOSFET 2N-CH 60V 73A EPM15

    Fairchild Semiconductor

    1,382
    FD6M033N06

    规格书

    Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 73A 3.3mOhm @ 40A, 10V 4V @ 250µA 129nC @ 10V 6010pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
    FD6M045N06

    FD6M045N06

    MOSFET 2N-CH 60V 60A EPM15

    Fairchild Semiconductor

    1,409
    FD6M045N06

    规格书

    Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 60A 4.5mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V 3890pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
    FD6M043N08

    FD6M043N08

    MOSFET 2N-CH 75V 65A EPM15

    Fairchild Semiconductor

    1,404
    FD6M043N08

    规格书

    Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 75V 65A 4.3mOhm @ 40A, 10V 4V @ 250µA 148nC @ 10V 6180pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
    FDZ1827NZ

    FDZ1827NZ

    MOSFET 2N-CH 20V 10A 6WLCSP

    Fairchild Semiconductor

    20,000
    FDZ1827NZ

    规格书

    PowerTrench® 6-XFBGA, WLCSP Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 10A (Ta) 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V 2055pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.3x2.3)
    FDC6304P

    FDC6304P

    MOSFET 2P-CH 25V 0.46A SSOT6

    Fairchild Semiconductor

    76,939
    FDC6304P

    规格书

    - SOT-23-6 Thin, TSOT-23-6 Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 25V 460mA 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V 62pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
    FDMA1025P

    FDMA1025P

    MOSFET 2P-CH 20V 3.1A 6MICROFET

    Fairchild Semiconductor

    27,000
    FDMA1025P

    规格书

    PowerTrench® 6-VDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.1A 155mOhm @ 3.1A, 4.5V 1.5V @ 250µA 4.8nC @ 4.5V 450pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
    FDPC1002S

    FDPC1002S

    MOSFET 2N-CH 25V 13A PWRCLIP-33

    Fairchild Semiconductor

    9,000
    FDPC1002S

    规格书

    PowerTrench® 8-PowerWDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V 2.2V @ 250µA, 2.2V @ 1mA 19nC @ 10V, 64nC @ 10V 1240pF @13V, 4335pF @ 13V 1.6W (Ta), 2W (Ta) -55°C ~ 150°C - - Surface Mount Powerclip-33
    FDMC6890NZ

    FDMC6890NZ

    MOSFET 2N-CH 20V 4A MICROFET 3X3

    Fairchild Semiconductor

    7,299
    FDMC6890NZ

    规格书

    PowerTrench® 6-WDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4A 68mOhm @ 4A, 4.5V 2V @ 250µA 3.4nC @ 4.5V 270pF @ 10V 1.92W, 1.78W -55°C ~ 150°C (TJ) - - Surface Mount MicroFET 3x3mm
    FDS6986AS

    FDS6986AS

    MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

    Fairchild Semiconductor

    3,700
    FDS6986AS

    规格书

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V 3V @ 250µA 17nC @ 10V 720pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDMC8200

    FDMC8200

    MOSFET N-CH

    Fairchild Semiconductor

    69,000
    FDMC8200

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
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