场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    FQB12N50TM

    FQB12N50TM

    MOSFET N-CH 500V 12.1A

    Fairchild Semiconductor

    24,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    HUF75639S3ST_Q

    HUF75639S3ST_Q

    MOSFET N-CH 100V 56A

    Fairchild Semiconductor

    36,800
    HUF75639S3ST_Q

    规格书

    * - Bulk Active - - - - - - - - - - - - - - -
    FDMC8010A

    FDMC8010A

    MOSFET N-CH

    Fairchild Semiconductor

    6,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDZ2552P

    FDZ2552P

    MOSFET 2P-CH 20V 5.5A 18BGA

    Fairchild Semiconductor

    3,000
    FDZ2552P

    规格书

    PowerTrench® 18-WFBGA Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Common Drain - 20V 5.5A (Ta) 45mOhm @ 5.5A, 4.5V 1.5V @ 250µA 13nC @ 4.5V 884pF @ 10V 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 18-BGA (2.5x4)
    FDZ2554P

    FDZ2554P

    MOSFET 2P-CH 20V 6.5A 18BGA

    Fairchild Semiconductor

    89,940
    FDZ2554P

    规格书

    PowerTrench® 18-WFBGA Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 6.5A 28mOhm @ 6.5A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1900pF @ 10V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 18-BGA (2.5x4)
    FDPC8014AS

    FDPC8014AS

    MOSFET 2N-CH 25V 20A PWRCLIP56

    Fairchild Semiconductor

    2,043
    FDPC8014AS

    规格书

    PowerTrench® 8-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 25V 20A, 40A 3.8mOhm @ 20A, 10V 2.5V @ 250µA 35nC @ 10V 2375pF @ 13V 2.1W, 2.3W -55°C ~ 150°C (TJ) - - Surface Mount Power Clip 56
    FDS8936A

    FDS8936A

    MOSFET 2N-CH 30V 6A 8SOIC

    Fairchild Semiconductor

    75,856
    FDS8936A

    规格书

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6A (Ta) 28mOhm @ 6A, 10V 3V @ 250µA 27nC @ 10V 650pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FCP11N65

    FCP11N65

    MOSFET N-CH

    Fairchild Semiconductor

    3,093

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6984S

    FDS6984S

    MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC

    Fairchild Semiconductor

    113,328
    FDS6984S

    规格书

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A, 8.5A 19mOhm @ 8.5A, 10V 3V @ 250µA 12nC @ 5V 1233pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDR8508P

    FDR8508P

    MOSFET 2P-CH 30V 3A SUPERSOT-8

    Fairchild Semiconductor

    21,815
    FDR8508P

    规格书

    PowerTrench® 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 3A 52mOhm @ 3A, 10V 3V @ 250µA 12nC @ 5V 750pF @ 15V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
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