图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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UT262DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1 V @ 900 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR11DIODE GEN PURP 100V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR31DIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR22DIODE GEN PURP 200V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 200 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 200 V | 80pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR12DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 100 V | 100pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR32DIODE GEN PURP 300V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 300 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 3 µA @ 300 V | 70pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UT261DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UTR51DIODE GEN PURP 500V 1A A AXIAL Microchip Technology |
0 |
|
- |
- | A, Axial | Bulk | Active | Standard | 500 V | 1A | 1.1 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 3 µA @ 500 V | 50pF @ 0V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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UT4005DIODE GEN PURP 50V 4A B Microchip Technology |
0 |
|
- |
- | Axial | Bulk | Active | Standard | 50 V | 4A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | - | - | - | Through Hole | B | -195°C ~ 175°C |
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UT3010DIODE GEN PURP 100V 3A B Microchip Technology |
0 |
|
- |
- | Axial | Bulk | Active | Standard | 100 V | 3A | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | - | - | - | Through Hole | B | -195°C ~ 175°C |