图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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1N5196URDIODE GP 225V 200MA DO213AA Microchip Technology |
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![]() 规格书 |
- | DO-213AA | Bulk | Active | Standard | 225 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 225 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
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1N4944/TRDIODE GEN PURP 400V 1A Microchip Technology |
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![]() 规格书 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | 35pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTXV1N4247/TRDIODE GEN PURP 600V 1A Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N4945/TRUFR,FRR Microchip Technology |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N3070URDIODE GP 200V 100MA DO213AA Microchip Technology |
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![]() 规格书 |
- | DO-213AA | Bulk | Active | Standard | 200 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | - | - | Surface Mount | DO-213AA | - |
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JANTX1N5618USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |
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JANTX1N5619USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JAN1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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MNS1N5811USDIODE GP 150V 3A SQ-MELF B Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANTXV1N5417DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |