上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTQ280N055TMOSFET N-CH 55V 280A TO3P IXYS |
0 | - |
|
- |
TrenchMV™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 280A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 9700 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
|
IXTT10P50MOSFET P-CH 500V 10A TO268 IXYS |
0 | - |
|
规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Box | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 900mOhm @ 5A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
|
IXTT20N50DMOSFET N-CH 500V 20A TO268 IXYS |
0 | - |
|
- |
Depletion | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 330mOhm @ 10A, 10V | 3.5V @ 250mA | 125 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
IXTU01N100DMOSFET N-CH 1000V 400MA TO251 IXYS |
0 | - |
|
规格书 |
Depletion | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 1000 V | 400mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 4.5V @ 25µA | 5.8 nC @ 5 V | ±20V | 100 pF @ 25 V | - | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
|
|
IXTU64N055TMOSFET N-CH 55V 64A TO251 IXYS |
0 | - |
|
- |
Trench | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | - | - | 4V @ 25µA | - | - | - | - | - | - | - | - | Through Hole | TO-251AA |
|
IXTV200N10TMOSFET N-CH 100V 200A PLUS220 IXYS |
0 | - |
|
- |
TrenchMV™ | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS220 |
|
IXTV230N085TMOSFET N-CH 85V 230A PLUS220 IXYS |
0 | - |
|
- |
TrenchMV™ | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 230A (Tc) | 10V | 4.4mOhm @ 50A, 10V | 4V @ 250µA | 187 nC @ 10 V | ±20V | 9900 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS220 |
|
IXTY2N80PMOSFET N-CH 800V 2A TO252 IXYS |
0 | - |
|
- |
PolarHV™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 6Ohm @ 1A, 10V | 5.5V @ 50µA | 10.6 nC @ 10 V | ±30V | 440 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
|
IXTY50N085TMOSFET N-CH 85V 50A TO252 IXYS |
0 | - |
|
- |
TrenchMV™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 50A (Tc) | 10V | 23mOhm @ 25A, 10V | 4V @ 25µA | 34 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
|
IXTY55N075TMOSFET N-CH 75V 55A TO252 IXYS |
0 | - |
|
规格书 |
TrenchMV™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 55A (Tc) | 10V | 19.5mOhm @ 27.5A, 10V | 4V @ 25µA | 33 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
