上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFK180N15PMOSFET N-CH 150V 180A TO264AA IXYS |
0 | - |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 180A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
IXFT26N100XHVMOSFET N-CH 1000V 26A TO268HV IXYS |
23 | - |
|
规格书 |
HiPerFET™, Ultra X | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Ta) | 10V | 320mOhm @ 500mA, 10V | 6V @ 4mA | 113 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
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IXFX240N15T2MOSFET N-CH 150V 240A PLUS247-3 IXYS |
4 | - |
|
规格书 |
HiPerFET™, TrenchT2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 460 nC @ 10 V | ±20V | 32000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK20N120PMOSFET N-CH 1200V 20A TO264AA IXYS |
3 | - |
|
规格书 |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFR64N50Q3MOSFET N-CH 500V 45A ISOPLUS247 IXYS |
1 | - |
|
规格书 |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFX80N50Q3MOSFET N-CH 500V 80A PLUS247-3 IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q3 Class | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFK80N50Q3MOSFET N-CH 500V 80A TO264AA IXYS |
1 | - |
|
规格书 |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFR15N100Q3MOSFET N-CH 1000V 10A ISOPLUS247 IXYS |
0 | - |
|
规格书 |
HiPerFET™, Q3 Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.2Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFX94N50P2MOSFET N-CH 500V 94A PLUS247-3 IXYS |
0 | - |
|
规格书 |
HiPerFET™, PolarP2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220 nC @ 10 V | ±30V | 13700 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
MMIX1F230N20TMOSFET N-CH 200V 168A 24SMPD IXYS |
0 | - |
|
规格书 |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 168A (Tc) | 10V | 8.3mOhm @ 60A, 10V | 5V @ 8mA | 378 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
