上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT5012JNMOSFET N-CH 500V 43A ISOTOP Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS IV® | SOT-227-4, miniBLOC | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 43A (Tc) | 10V | 120mOhm @ 21.5A, 10V | 4V @ 2.5mA | 370 nC @ 10 V | ±30V | 6500 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT5022BNGMOSFET N-CH 500V 27A TO247AD Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 220mOhm @ 13.5A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT5025BNMOSFET N-CH 500V 23A TO247AD Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 23A (Tc) | 10V | 250mOhm @ 11.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT6030BNMOSFET N-CH 600V 23A TO247AD Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 300mOhm @ 11.5A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT6040BNMOSFET N-CH 600V 18A TO247AD Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT6040BNGMOSFET N-CH 600V 18A TO247AD Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 400mOhm @ 9A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT8018JNMOSFET N-CH 800V 40A ISOTOP Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS IV® | SOT-227-4, miniBLOC | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 40A (Tc) | 10V | 180mOhm @ 20A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT8075BNMOSFET N-CH 800V 13A TO247AD Microsemi Corporation |
0 | - |
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规格书 |
POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 750mOhm @ 6.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT58MJ50JMOSFET N-CH 500V 58A ISOTOP Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10M07JVRMOSFET N-CH 100V 225A ISOTOP Microsemi Corporation |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 225A (Tc) | 10V | - | 4V @ 5mA | 1050 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
