上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQU8N25TUMOSFET N-CH 250V 6.2A IPAK Fairchild Semiconductor |
5,629 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 6.2A (Tc) | 10V | 550mOhm @ 3.1A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 530 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQPF4N60MOSFET N-CH 600V 2.6A TO220F Fairchild Semiconductor |
4,775 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.6A (Tc) | 10V | 2.2Ohm @ 1.3A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQPF5N50CFTUMOSFET N-CH 500V 5A TO220F Fairchild Semiconductor |
3,499 | - |
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规格书 |
FRFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.55Ohm @ 2.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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IRL540AMOSFET N-CH 100V 28A TO220-3 Fairchild Semiconductor |
3,000 | - |
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规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 5V | 58mOhm @ 14A, 5V | 2V @ 250µA | 54 nC @ 5 V | ±20V | 1580 pF @ 25 V | - | 121W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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RFD16N05_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,435 | - |
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规格书 |
PSPICE® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 16A (Tc) | 10V | 47mOhm @ 16A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | 900 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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HUF76121S3SN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,200 | - |
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规格书 |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 4.5V, 10V | 21mOhm @ 47A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDPF7N50MOSFET N-CH 500V 7A TO220F Fairchild Semiconductor |
265,296 | - |
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规格书 |
UniFET™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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IRFS540AMOSFET N-CH 100V 17A TO220F Fairchild Semiconductor |
88,157 | - |
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规格书 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 52mOhm @ 8.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | - | 1710 pF @ 25 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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IRLS540AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
12,350 | - |
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规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 5V | 58mOhm @ 8.5A, 5V | 2V @ 250µA | 54 nC @ 5 V | ±20V | 1580 pF @ 25 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQPF6N60CMOSFET N-CH 600V 5.5A TO220F Fairchild Semiconductor |
5,632 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
