制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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HUFA75343P3MOSFET N-CH 55V 75A TO220-3 Fairchild Semiconductor |
643 | - |
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![]() 规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQI2P25TUMOSFET P-CH 250V 2.3A I2PAK Fairchild Semiconductor |
1,000 | - |
|
![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.3A (Tc) | 10V | 4Ohm @ 1.15A, 10V | 5V @ 250µA | 8.5 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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FQI3P20TUMOSFET P-CH 200V 2.8A I2PAK Fairchild Semiconductor |
1,000 | - |
|
![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 2.8A (Tc) | 10V | 2.7Ohm @ 1.4A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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FQB16N25CTMMOSFET N-CH 250V 15.6A D2PAK Fairchild Semiconductor |
845 | - |
|
![]() 规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 15.6A (Tc) | 10V | 270mOhm @ 7.8A, 10V | 4V @ 250µA | 53.5 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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NDB7052LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 | - |
|
![]() 规格书 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 5V, 10V | 7.5mOhm @ 37.5A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 4030 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQAF44N08MOSFET N-CH 80V 35.6A TO3PF Fairchild Semiconductor |
720 | - |
|
![]() 规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 35.6A (Tc) | 10V | 34mOhm @ 17.8A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1430 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
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FQAF19N20MOSFET N-CH 200V 15A TO3PF Fairchild Semiconductor |
684 | - |
|
![]() 规格书 |
QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 15A (Tc) | 10V | 150mOhm @ 7.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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FQPF5N80MOSFET N-CH 800V 2.8A TO220F Fairchild Semiconductor |
610 | - |
|
![]() 规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.8A (Tc) | 10V | 2.6Ohm @ 1.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQI5N80TUMOSFET N-CH 800V 4.8A I2PAK Fairchild Semiconductor |
993 | - |
|
![]() 规格书 |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.8A (Tc) | 10V | 2.6Ohm @ 2.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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SSS6N70AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
950 | - |
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![]() 规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |