上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STL45N65M5MOSFET N-CH 650V 22.5A PWRFLAT STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.8A (Ta), 22.5A (Tc) | 10V | 86mOhm @ 14.5A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±25V | 3470 pF @ 100 V | - | 2.8W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFLAT™ (8x8) |
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STW45N60DM2AGMOSFET N-CH 600V 34A TO247 STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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STO47N60M6MOSFET N-CH 600V 36A TOLL STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ M6 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 80mOhm @ 18A, 10V | 4.75V @ 250µA | 52.2 nC @ 10 V | ±25V | 2340 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
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STL47N60M6MOSFET N-CH 600V 31A PWRFLAT HV STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ M6 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 80mOhm @ 15.5A, 10V | 4.75V @ 250µA | 57 nC @ 10 V | ±25V | - | - | 189W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STB35N65M5MOSFET N-CH 650V 27A D2PAK STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ V | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 98mOhm @ 13.5A, 10V | 5V @ 250µA | 83 nC @ 10 V | ±25V | 3750 pF @ 100 V | - | 160W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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STF46N60M6MOSFET N-CH 600V 36A TO220FP STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ M6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 80mOhm @ 18A, 10V | 4.75V @ 250µA | 53.5 nC @ 10 V | ±25V | 2340 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STW23N85K5MOSFET N-CH 850V 19A TO247 STMicroelectronics |
0 | - |
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规格书 |
SuperMESH5™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 19A (Tc) | 10V | 275mOhm @ 9.5A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±30V | 1650 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW45N60DM6MOSFET N-CH 600V 30A TO247 STMicroelectronics |
0 | - |
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规格书 |
MDmesh™ DM6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44 nC @ 10 V | ±25V | 1920 pF @ 100 V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW38N65M5MOSFET N-CH 650V 30A TO247 STMicroelectronics |
0 | - |
|
规格书 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±25V | 3000 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW21N90K5MOSFET N-CH 900V 18.5A TO247-3 STMicroelectronics |
0 | - |
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规格书 |
SuperMESH5™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43 nC @ 10 V | ±30V | 1645 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
