上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STFI9N80K5MOSFET N-CH 800V 7A I2PAKFP STMicroelectronics |
1,465 | - |
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规格书 |
MDmesh™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12 nC @ 10 V | ±30V | 340 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STD100NH02LT4MOSFET N-CH 24V 60A DPAK STMicroelectronics |
8,582 | - |
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规格书 |
STripFET™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 60A (Tc) | 5V, 10V | 4.8mOhm @ 30A, 10V | 1.8V @ 250µA | 84 nC @ 10 V | ±20V | 3940 pF @ 15 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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STFI6N80K5MOSFET N-CH 800V 4.5A I2PAKFP STMicroelectronics |
1,477 | - |
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规格书 |
SuperMESH5™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 13 nC @ 10 V | 30V | 270 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STFH13N60M2MOSFET N-CH 600V 11A TO220FP STMicroelectronics |
210 | - |
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规格书 |
MDmesh™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 580 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FP |
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STH250N6F3-6MOSFET N-CH 60V 250A H2PAK STMicroelectronics |
1,000 | - |
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- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STF100N10F7MOSFET N CH 100V 45A TO-220FP STMicroelectronics |
10,301 | - |
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规格书 |
DeepGATE™, STripFET™ VII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 8mOhm @ 22.5A, 10V | 4.5V @ 250µA | 61 nC @ 10 V | ±20V | 4369 pF @ 50 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220FP |
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STFI10NK60ZMOSFET N-CH 600V 10A I2PAKFP STMicroelectronics |
1,426 | - |
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规格书 |
SuperMESH™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STL19N65M5MOSFET N-CH 650V 12.5A POWERFLAT STMicroelectronics |
2,408 | - |
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- |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.3A (Ta), 12.5A (Tc) | 10V | 240mOhm @ 7.5A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±25V | 1240 pF @ 100 V | - | 2.8W (Ta), 90W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (8x8) HV |
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STFI15N95K5MOSFET N-CH 950V 7.5A I2PAKFP STMicroelectronics |
180 | - |
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规格书 |
MDmesh™ K5 | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950 V | 7.5A (Ta) | 10V | 500mOhm @ 5.5A, 10V | 5V @ 100µA | 30 nC @ 10 V | ±30V | 855 pF @ 10 V | - | 30W | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
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STFI15N65M5MOSFET N CH 650V 11A I2PAKFP STMicroelectronics |
1,396 | - |
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规格书 |
MDmesh™ V | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 816 pF @ 100 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-281 (I2PAKFP) |
