上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW56N65M2MOSFET N-CH 650V 49A TO247 STMicroelectronics |
114 | - |
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规格书 |
MDmesh™ M2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49A (Tc) | 10V | 62mOhm @ 24.5A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±25V | 3900 pF @ 100 V | - | 358W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STO68N65DM6N-CHANNEL 650 V, 53 MOHM TYP., 5 STMicroelectronics |
187 | - |
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规格书 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Tc) | 10V | 65mOhm @ 27.5A, 10V | 4.75V @ 250µA | 80 nC @ 10 V | ±25V | 3528 pF @ 100 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL (HV) |
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STW69N65M5-4MOSFET N-CH 650V 58A TO247-4L STMicroelectronics |
385 | - |
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规格书 |
MDmesh™ V | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 330W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-4L |
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STB32N65M5MOSFET N-CH 650V 24A D2PAK STMicroelectronics |
940 | - |
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规格书 |
MDmesh™ V | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±25V | 3320 pF @ 100 V | - | 150W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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STB34NM60NMOSFET N-CH 600V 29A D2PAK STMicroelectronics |
500 | - |
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规格书 |
MDmesh™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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STWA88N65M5MOSFET N-CH 650V 84A TO247 STMicroelectronics |
593 | - |
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规格书 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW34NM60NDMOSFET N-CH 600V 29A TO247 STMicroelectronics |
588 | - |
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规格书 |
FDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4 nC @ 10 V | ±25V | 2785 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW65N80K5MOSFET N-CH 800V 46A TO247 STMicroelectronics |
439 | - |
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规格书 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 80mOhm @ 23A, 10V | 5V @ 100µA | 92 nC @ 10 V | ±30V | 3230 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STWA12N120K5MOSFET N-CH 1200V 12A TO247 STMicroelectronics |
593 | - |
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规格书 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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STW75N60M6-4MOSFET N-CH 600V 72A TO247-4 STMicroelectronics |
531 | - |
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规格书 |
MDmesh™ M6 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4850 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
