上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW28NM50NMOSFET N-CH 500V 21A TO247-3 STMicroelectronics |
510 | - |
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规格书 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 158mOhm @ 10.5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1735 pF @ 25 V | - | 150W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW57N65M5MOSFET N-CH 650V 42A TO247 STMicroelectronics |
443 | - |
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规格书 |
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW20N95DK5MOSFET N-CH 950V 18A TO247 STMicroelectronics |
518 | - |
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规格书 |
MDmesh™ DK5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 18A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 50.7 nC @ 10 V | ±30V | 1600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW12N150K5MOSFET N-CH 1500V 7A TO247 STMicroelectronics |
490 | - |
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规格书 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 5V @ 100µA | 47 nC @ 10 V | ±30V | 1360 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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STW68N65DM6-4AGMOSFET N-CH 650V 72A TO247-4 STMicroelectronics |
561 | - |
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规格书 |
MDmesh™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 72A (Tc) | - | 39mOhm @ 36A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5900 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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STP34NM60NMOSFET N-CH 600V 29A TO220-3 STMicroelectronics |
267 | - |
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规格书 |
MDmesh™ II | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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STW12N120K5MOSFET N-CH 1200V 12A TO247 STMicroelectronics |
1,172 | - |
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规格书 |
MDmesh™ K5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SCTWA35N65G2VTRANS SJT N-CH 650V 45A TO247 STMicroelectronics |
577 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 72mOhm @ 20A, 20V | 3.2V @ 1mA | 73 nC @ 20 V | +20V, -5V | 73000 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
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STW65N65DM2AGMOSFET N-CH 650V 60A TO247 STMicroelectronics |
349 | - |
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规格书 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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STW72N60DM2AGMOSFET N-CH 600V 66A TO247 STMicroelectronics |
528 | - |
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规格书 |
MDmesh™ DM2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 42mOhm @ 33A, 10V | 5V @ 250µA | 121 nC @ 10 V | ±25V | 5508 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
