上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCT012H90G3AGH2PAK-7 STMicroelectronics |
0 | - |
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规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 110A (Tc) | 15V, 18V | 15.8mOhm @ 60A, 18V | 4.2V @ 10mA | 138 nC @ 18 V | +18V, -5V | 3880 pF @ 600 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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SCT016H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
0 | - |
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规格书 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2N7000MOSFET N-CH 60V 350MA TO92-3 STMicroelectronics |
0 | - |
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规格书 |
STripFET™ | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 250µA | 2 nC @ 5 V | ±18V | 43 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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STI5N52UMOSFET N-CH 525V 4.4A I2PAK STMicroelectronics |
0 | - |
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规格书 |
UltraFASTmesh™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 525 V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9 nC @ 10 V | ±30V | 529 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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STL8P2UH7MOSFET P-CH 20V 8A POWERFLAT STMicroelectronics |
0 | - |
|
规格书 |
DeepGATE™, STripFET™ VII | 6-PowerWDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 1.5V, 4.5V | 22.5mOhm @ 4A, 4.5V | 1V @ 250µA | 22 nC @ 4.5 V | ±8V | 2390 pF @ 16 V | - | 2.4W (Tc) | 150°C (TJ) | - | - | Surface Mount | PowerFlat™ (2x2) |
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STN3P10F6SOT 223 STMicroelectronics |
0 | - |
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规格书 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3A | 10V | 180mOhm @ 1.5A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±20V | 900 pF @ 25 V | - | 3.3W | -55°C ~ 175°C | - | - | Surface Mount | SOT-223 |
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STD70R1K3SDISCRETE STMicroelectronics |
0 | - |
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- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 5A (Tc) | 10V | 1.4Ohm @ 1.75A, 10V | 3.75V @ 250µA | 4.1 nC @ 10 V | ±25V | 175 pF @ 100 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STU70R1K3SDISCRETE STMicroelectronics |
0 | - |
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- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 5A (Tc) | 10V | 1.4Ohm @ 1.75A, 10V | 3.75V @ 250µA | 4.1 nC @ 4.5 V | ±25V | 175 pF @ 100 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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STQ3N45K3-APMOSFET N-CH 450V 600MA TO92-3 STMicroelectronics |
0 | - |
|
规格书 |
SuperMESH3™ | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 600mA (Tc) | 10V | 3.8Ohm @ 500mA, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 3W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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STP2NK60ZMOSFET N-CH 600V 1.4A TO220AB STMicroelectronics |
0 | - |
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规格书 |
SuperMESH™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 8Ohm @ 700mA, 10V | 4.5V @ 50µA | 10 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
