上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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SCT4062KEHRC111200V, 26A, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
166 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
SCT3060ALGC11SICFET N-CH 650V 39A TO247N Rohm Semiconductor |
462 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247N |
|
SCT4045DRC15750V, 45M, 4-PIN THD, TRENCH-STR Rohm Semiconductor |
3,459 | - |
|
规格书 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 34A (Tc) | 18V | 59mOhm @ 17A, 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | +21V, -4V | 1460 pF @ 500 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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R6047ENZ4C13MOSFET N-CH 600V 47A TO247 Rohm Semiconductor |
594 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 4V @ 1mA | 145 nC @ 10 V | ±20V | 3850 pF @ 25 V | - | 481W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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SCT4062KEC111200V, 62M, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
4,717 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 81mOhm @ 12A, 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | +21V, -4V | 1498 pF @ 800 V | - | 115W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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SCT4036KW7TL1200V, 40A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor |
413 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tj) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 150W | 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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SCT3080KLHRC11SICFET N-CH 1200V 31A TO247N Rohm Semiconductor |
816 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
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SCT4036KEHRC111200V, 43A, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
368 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
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SCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-ST Rohm Semiconductor |
4,683 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | - | - | Through Hole | TO-247N |
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SCT3030KLGC11SICFET N-CH 1200V 72A TO247N Rohm Semiconductor |
265 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W (Tc) | 175°C (TJ) | - | - | Through Hole | TO-247N |
