上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6020KNJTLMOSFET N-CH 600V 20A LPTS Rohm Semiconductor |
3,399 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
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R6020ENXMOSFET N-CH 600V 20A TO220FM Rohm Semiconductor |
482 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 10A, 10V | 4V @ 1mA | 60 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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RCX330N25MOSFET N-CH 250V 33A TO220FM Rohm Semiconductor |
308 | - |
|
规格书 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 33A (Tc) | 10V | - | - | - | ±30V | - | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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RS6L120BGTB1NCH 60V 120A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,079 | - |
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规格书 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 2.7mOhm @ 90A, 10V | 2.5V @ 1mA | 51 nC @ 10 V | ±20V | 3520 pF @ 30 V | - | 104W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
R6535ENZ4C13650V 35A TO-247, LOW-NOISE POWER Rohm Semiconductor |
539 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 4V @ 1.21mA | 110 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 379W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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R6035ENZ4C13MOSFET N-CH 600V 35A TO247 Rohm Semiconductor |
533 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 4V @ 1mA | 110 nC @ 10 V | ±20V | 2720 pF @ 25 V | - | 379W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6535KNZ4C13650V 35A TO-247, HIGH-SPEED SWIT Rohm Semiconductor |
264 | - |
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规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 5V @ 1.21mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 379W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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R8009KNXC7GHIGH-SPEED SWITCHING NCH 800V 9A Rohm Semiconductor |
999 | - |
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规格书 |
- | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9A (Ta) | 10V | 600mOhm @ 4.5A, 10V | 4.5V @ 5mA | 27 nC @ 10 V | ±20V | 900 pF @ 100 V | - | 59W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6030KNXC7MOSFET N-CH 600V 30A TO220FM Rohm Semiconductor |
990 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R6020JNJGTLMOSFET N-CH 600V 20A LPTS Rohm Semiconductor |
1,787 | - |
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规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45 nC @ 15 V | ±30V | 1500 pF @ 100 V | - | 252W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | LPTS |
