上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQD5P20TM_F080MOSFET P-CH 200V 3.7A DPAK onsemi |
0 | - |
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- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD6N50CTM_F080MOSFET N-CH 500V 4.5A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 2.5W (Ta), 61W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD7N20TM_F080MOSFET N-CH 200V 5.3A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.3A (Tc) | 10V | 690mOhm @ 2.65A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD7P20TM_F080MOSFET P-CH 200V 5.7A DPAK onsemi |
0 | - |
|
- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 5.7A (Tc) | 10V | 690mOhm @ 2.85A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 770 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD8P10TM_F080MOSFET P-CH 100V 6.6A DPAK onsemi |
0 | - |
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- |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 530mOhm @ 3.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQH44N10-F133MOSFET N-CH 100V 48A TO247-3 onsemi |
0 | - |
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规格书 |
QFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 10V | 39mOhm @ 24A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±25V | 1800 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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FQP19N20C_F080MOSFET N-CH 200V 19A TO220-3 onsemi |
0 | - |
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- |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP32N20C_F080MOSFET N-CH 200V 28A TO220-3 onsemi |
0 | - |
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规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 28A (Tc) | 10V | 82mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP6N60C_F080MOSFET N-CH 600V 5.5A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 2Ohm @ 2.75A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQPF3N90_NLMOSFET N-CH 900V 2.1A TO220F onsemi |
0 | - |
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规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 2.1A (Tc) | 10V | 4.25Ohm @ 1.05A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
