制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FDH5500-F085MOSFET N-CH 55V 75A TO247-3 onsemi |
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![]() 规格书 |
UltraFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 268 nC @ 20 V | ±20V | 3565 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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FDH633605MOSFET N-CH DO-35 onsemi |
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- | DO-204AH, DO-35, Axial | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | DO-35 |
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FDPF3860TYDTUMOSFET N-CH 100V 20A TO220F-3 onsemi |
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![]() 规格书 |
PowerTrench® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 38.2mOhm @ 5.9A, 10V | 4.5V @ 250µA | 35 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
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FQD10N20CTM_F080MOSFET N-CH 200V 7.8A DPAK onsemi |
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![]() 规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7.8A (Tc) | 10V | 360mOhm @ 3.9A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD12N20TM_F080MOSFET N-CH 200V 9A DPAK onsemi |
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QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 910 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD16N25CTM_F080MOSFET N-CH 250V 16A DPAK onsemi |
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QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 16A (Tc) | 10V | 270mOhm @ 8A, 10V | 4V @ 250µA | 53.5 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD19N10TM_F080MOSFET N-CH 100V 15.6A DPAK onsemi |
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QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.6A (Tc) | 10V | 100mOhm @ 7.8A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 780 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD30N06TF_F080MOSFET N-CH 60V 22.7A DPAK onsemi |
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![]() 规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 22.7A (Tc) | 10V | 45mOhm @ 11.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 945 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD5N50CTM_F080MOSFET N-CH 500V 4A DPAK onsemi |
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![]() 规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQD5N60CTM_F080MOSFET N-CH 600V 2.8A DPAK onsemi |
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QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |