上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB9N08LTMMOSFET N-CH 80V 9.3A D2PAK onsemi |
0 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 5V, 10V | 210mOhm @ 4.65A, 10V | 2V @ 250µA | 6.1 nC @ 5 V | ±20V | 280 pF @ 25 V | - | 3.75W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQP6N40CMOSFET N-CH 400V 6A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQPF6N40CMOSFET N-CH 400V 6A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
HUFA76409D3STMOSFET N-CH 60V 18A TO252AA onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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HUFA76407P3MOSFET N-CH 60V 13A TO220-3 onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQD6P25TFMOSFET P-CH 250V 4.7A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 4.7A (Tc) | 10V | 1.1Ohm @ 2.35A, 10V | 5V @ 250µA | 27 nC @ 10 V | ±30V | 780 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQP2N50MOSFET N-CH 500V 2.1A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.1A (Tc) | 10V | 5.3Ohm @ 1.05A, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP7P20MOSFET P-CH 200V 7.3A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 7.3A (Tc) | 10V | 690mOhm @ 3.65A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 770 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQB17N08TMMOSFET N-CH 80V 16.5A D2PAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 16.5A (Tc) | 10V | 115mOhm @ 8.25A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 450 pF @ 25 V | - | 3.13W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
HUF76609D3MOSFET N-CH 100V 10A IPAK onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 160mOhm @ 10A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±16V | 425 pF @ 25 V | - | 49W (Tc) | -55°C ~ 155°C (TJ) | - | - | Through Hole | IPAK |
