上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB1P50TMMOSFET P-CH 500V 1.5A D2PAK onsemi |
0 | - |
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规格书 |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 500 V | 1.5A (Tc) | 10V | 10.5Ohm @ 750mA, 10V | 5V @ 250µA | 14 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 3.13W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FQD3N60TMMOSFET N-CH 600V 2.4A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 450 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FQU2N100TUMOSFET N-CH 1000V 1.6A IPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.6A (Tc) | 10V | 9Ohm @ 800mA, 10V | 5V @ 250µA | 15.5 nC @ 10 V | ±30V | 520 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQPF20N06MOSFET N-CH 60V 15A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 10V | 60mOhm @ 7.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQP3N60MOSFET N-CH 600V 3A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 3.6Ohm @ 1.5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 450 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQU5N40TUMOSFET N-CH 400V 3.4A IPAK onsemi |
0 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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HUF75309P3MOSFET N-CH 55V 19A TO220-3 onsemi |
0 | - |
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规格书 |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQU5N50CTUMOSFET N-CH 500V 4A IPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQP6P25MOSFET P-CH 250V 6A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 250µA | 27 nC @ 10 V | ±30V | 780 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP5N50CMOSFET N-CH 500V 5A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
