上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDZ293PMOSFET P-CH 20V 4.6A 9BGA onsemi |
0 | - |
|
规格书 |
PowerTrench® | 9-VFBGA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.6A, 4.5V | 1.5V @ 250µA | 11 nC @ 4.5 V | ±12V | 754 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-BGA (1.5x1.6) |
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FQU13N10LTUMOSFET N-CH 100V 10A IPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 5V, 10V | 180mOhm @ 5A, 10V | 2V @ 250µA | 12 nC @ 5 V | ±20V | 520 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
FQPF11P06MOSFET P-CH 60V 8.6A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.6A (Tc) | 10V | 175mOhm @ 4.3A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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FQU10N20CTUMOSFET N-CH 200V 7.8A IPAK onsemi |
0 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7.8A (Tc) | 10V | 360mOhm @ 3.9A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
RFD3055SMMOSFET N-CH 60V 12A TO252AA onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 23 nC @ 20 V | ±20V | 300 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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FQU11P06TUMOSFET P-CH 60V 9.4A IPAK onsemi |
0 | - |
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规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.4A (Tc) | 10V | 185mOhm @ 4.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQPF13N10MOSFET N-CH 100V 8.7A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 180mOhm @ 4.35A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 450 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF75307D3MOSFET N-CH 55V 15A IPAK onsemi |
0 | - |
|
规格书 |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
FQP7N20MOSFET N-CH 200V 6.6A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 6.6A (Tc) | 10V | 690mOhm @ 3.3A, 10V | 5V @ 250µA | 10 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQP11P06MOSFET P-CH 60V 11.4A TO220-3 onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
