上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDD6670ASMOSFET N-CH 30V 76A TO252 onsemi |
0 | - |
|
规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 76A (Ta) | 4.5V, 10V | 8mOhm @ 13.8A, 10V | 3V @ 1mA | 40 nC @ 10 V | ±20V | 1580 pF @ 15 V | - | 70W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FDS7066N3MOSFET N-CH 30V 23A 8SO onsemi |
0 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 5.5mOhm @ 23A, 10V | 3V @ 250µA | 69 nC @ 5 V | ±16V | 4973 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO FLMP |
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FDS7088SN3MOSFET N-CH 30V 21A 8SO onsemi |
0 | - |
|
规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 4mOhm @ 21A, 10V | 3V @ 1mA | 80 nC @ 10 V | ±20V | 3230 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO FLMP |
|
FQPF18N50V2MOSFET N-CH 500V 18A TO220F onsemi |
0 | - |
|
规格书 |
QFET® | TO-220-3 Full Pack | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 18A (Tc) | 10V | 265mOhm @ 9A, 10V | 5V @ 250µA | 55 nC @ 10 V | ±30V | 3290 pF @ 25 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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BS170GMOSFET N-CH 60V 500MA TO92-3 onsemi |
0 | - |
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- |
- | TO-226-3, TO-92-3 Long Body | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
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BS170RL1GMOSFET N-CH 60V 500MA TO92-3 onsemi |
0 | - |
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- |
- | TO-226-3, TO-92-3 Long Body, Formed Leads | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
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BS170RLRMGMOSFET N-CH 60V 500MA TO92-3 onsemi |
0 | - |
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- |
- | TO-226-3, TO-92-3 Long Body, Formed Leads | Tape & Box (TB) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
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BS170ZL1GMOSFET N-CH 60V 500MA TO92-3 onsemi |
0 | - |
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- |
- | TO-226-3, TO-92-3 Long Body | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 (TO-226) |
|
MMSF3P02HDR2SGMOSFET P-CH 20V 5.6A 8SOIC onsemi |
0 | - |
|
- |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | 4.5V, 10V | 75mOhm @ 3A, 10V | 2V @ 250µA | 46 nC @ 10 V | ±20V | 1400 pF @ 16 V | - | 2.5W (Ta) | - | - | - | Surface Mount | 8-SOIC |
|
NILMS4501NR2GMOSFET N-CH 24V 9.5A 4PLLP onsemi |
0 | - |
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规格书 |
- | 4-DFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 9.5A (Ta) | 10V | 13mOhm @ 6A, 10V | 2V @ 250µA | 25 nC @ 10 V | ±10V | 1500 pF @ 6 V | Current Sensing | 1.4W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PLLP (6.2x5.2) |
