上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA65R600C6XKSA1MOSFET N-CH 650V 7.3A TO220 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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IPA65R660CFDXKSA1MOSFET N-CH 650V 6A TO220 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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IPI110N20N3GAKSA1MOSFET N-CH 200V 88A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI320N20N3GAKSA1MOSFET N-CH 200V 34A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI50R299CPXKSA1MOSFET N-CH 500V 12A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI530N15N3GXKSA1MOSFET N-CH 150V 21A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI65R110CFDXKSA1MOSFET N-CH 650V 31.2A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI65R190CFDXKSA1MOSFET N-CH 650V 17.5A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI65R420CFDXKSA1MOSFET N-CH 650V 8.7A TO262-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
