制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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AUIRFR5505MOSFET P-CH 55V 18A DPAK Infineon Technologies |
0 | - |
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![]() 规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRFR5505TRLMOSFET P-CH 55V 18A DPAK Infineon Technologies |
0 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRFR6215MOSFET P-CH 150V 13A DPAK Infineon Technologies |
0 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRFS4310MOSFET N-CH 100V 75A D2PAK Infineon Technologies |
0 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFS4610MOSFET N-CH 100V 73A D2PAK Infineon Technologies |
0 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFSL4310MOSFET N-CH 100V 75A TO262 Infineon Technologies |
0 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | - | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRFU4104MOSFET N-CH 40V 42A IPAK Infineon Technologies |
0 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRFZ44VZSMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
0 | - |
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![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFZ44VZSTRLMOSFET N-CH 60V 57A D2PAK Infineon Technologies |
0 | - |
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![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFZ44ZMOSFET N-CH 55V 51A TO220 Infineon Technologies |
0 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |