上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA60R520E6XKSA1MOSFET N-CH 600V 8.1A TO220-FP Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | ±20V | 512 pF @ 100 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA60R750E6XKSA1MOSFET N-CH 600V 5.7A TO220-FP Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPD60R450E6BTMA1MOSFET N-CH 600V 9.2A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R600E6MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R750E6BTMA1MOSFET N-CH 600V 5.7A TO252-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP60R450E6XKSA1MOSFET N-CH 600V 9.2A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP60R520E6XKSA1MOSFET N-CH 600V 8.1A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | ±20V | 512 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP60R600E6XKSA1MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP60R750E6XKSA1MOSFET N-CH 600V 5.7A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP65R280E6XKSA1MOSFET N-CH 650V 13.8A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
