上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB100N04S204ATMA1MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB100N04S2L03ATMA1MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB100N06S205ATMA1MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5110 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB100N06S2L05ATMA1MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB12CN10N GMOSFET N-CH 100V 67A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.6mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB160N04S203ATMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.9mOhm @ 60A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPB160N04S2L03ATMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 5 V | ±20V | 6000 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPB230N06L3GATMA1MOSFET N-CH 60V 30A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 30A, 10V | 2.2V @ 11µA | 10 nC @ 4.5 V | ±20V | 1600 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB26CN10NGATMA1MOSFET N-CH 100V 35A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB34CN10NGATMA1MOSFET N-CH 100V 27A D2PAK Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Tc) | 10V | 34mOhm @ 27A, 10V | 4V @ 29µA | 24 nC @ 10 V | ±20V | 1570 pF @ 50 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
