上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP11N03LAMOSFET N-CH 25V 30A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 11.5mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP120N06NGAKSA1MOSFET N-CH 60V 75A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 94µA | 62 nC @ 10 V | ±20V | 2100 pF @ 30 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP12CNE8N GMOSFET N-CH 85V 67A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 64 nC @ 10 V | ±20V | 4340 pF @ 40 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP13N03LB GMOSFET N-CH 30V 30A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 10 nC @ 5 V | ±20V | 1355 pF @ 15 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP16CNE8N GMOSFET N-CH 85V 53A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 53A (Tc) | 10V | 16.5mOhm @ 53A, 10V | 4V @ 61µA | 48 nC @ 10 V | ±20V | 3230 pF @ 40 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP21N03L GMOSFET N-CH TO-220 Infineon Technologies |
0 | - |
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规格书 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO220-3 |
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IPP25N06S325XKMOSFET N-CH 55V 25A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 10V | 25.1mOhm @ 15A, 10V | 4V @ 20µA | 41 nC @ 10 V | ±20V | 1862 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP25N06S3L-22MOSFET N-CH 55V 25A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 25A (Tc) | 5V, 10V | 21.6mOhm @ 17A, 10V | 2.2V @ 20µA | 47 nC @ 10 V | ±16V | 2260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP26CN10NGHKSA1MOSFET N-CH 100V 35A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP26CNE8N GMOSFET N-CH 85V 35A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | 4V @ 39µA | 31 nC @ 10 V | ±20V | 2070 pF @ 40 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
