制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPU13N03LA GMOSFET N-CH 25V 30A TO251-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | P-TO251-3-1 |
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IPP09N03LAMOSFET N-CH 25V 50A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 9.2mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP14N03LAMOSFET N-CH 25V 30A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Tc) | 4.5V, 10V | 13.9mOhm @ 30A, 10V | 2V @ 20µA | 8.3 nC @ 5 V | ±20V | 1043 pF @ 15 V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP05N03LAMOSFET N-CH 25V 80A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 55A, 10V | 2V @ 50µA | 25 nC @ 5 V | ±20V | 3110 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP06N03LAMOSFET N-CH 25V 50A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPA04N50C3XKSA1MOSFET N-CH 560V 4.5A TO220-FP Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP04N03LAMOSFET N-CH 25V 80A TO220-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 4.2mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPA21N50C3XKSA1MOSFET N-CH 560V 21A TO220-FP Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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SPA12N50C3XKSA1MOSFET N-CH 560V 11.6A TO220-FP Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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SPA04N60C3XKSA1MOSFET N-CH 650V 4.5A TO220-FP Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |