制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IRFB7740PBFMOSFET N-CH 75V 87A TO220AB Infineon Technologies |
65 | - |
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![]() 规格书 |
StrongIRFET™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | 3.7V @ 100µA | 122 nC @ 10 V | ±20V | 4650 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF7473TRPBFMOSFET N-CH 100V 6.9A 8SO Infineon Technologies |
84 | - |
|
![]() 规格书 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Ta) | 10V | 26mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61 nC @ 10 V | ±20V | 3180 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6215STRLPBFMOSFET P-CH 150V 13A D2PAK Infineon Technologies |
94 | - |
|
![]() 规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFR8403MOSFET N-CH 40V 100A DPAK Infineon Technologies |
88 | - |
|
![]() 规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSB028N06NN3GXUMA1MOSFET N-CH 60V 22A/90A 2WDSON Infineon Technologies |
83 | - |
|
![]() 规格书 |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta), 90A (Tc) | 10V | 2.8mOhm @ 30A, 10V | 4V @ 102µA | 143 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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SPA16N50C3XKSA1MOSFET N-CH 560V 16A TO220-3 Infineon Technologies |
34 | - |
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![]() 规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP100N10S305AKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
65 | - |
|
![]() 规格书 |
OptiMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPB80N08S2L07ATMA1MOSFET N-CH 75V 80A TO263-3 Infineon Technologies |
64 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 250µA | 233 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB180N08S402ATMA1MOSFET N-CH 80V 180A TO263-7 Infineon Technologies |
35 | - |
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![]() 规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 4V @ 220µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3 |
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IPF015N10N5ATMA1TRENCH >=100V Infineon Technologies |
34 | - |
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![]() 规格书 |
OptiMOS™ 5 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Ta), 276A (Tc) | 6V, 10V | 1.53mOhm @ 100A, 10V | 3.8V @ 279µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-1 |