上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH8303TRPBFMOSFET N-CH 30V 43A/100A 8PQFN Infineon Technologies |
1,121 | - |
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规格书 |
HEXFET®, StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 43A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.2V @ 150µA | 179 nC @ 10 V | ±20V | 7736 pF @ 24 V | - | 3.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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BSZ010NE2LS5ATMA1MOSFET N-CH 25V 32A/40A TSDSON Infineon Technologies |
3,523 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2V @ 250µA | 29 nC @ 4.5 V | ±16V | 3900 pF @ 12 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-34 |
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IRLR3636TRLPBFMOSFET N-CH 60V 50A DPAK Infineon Technologies |
705 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC120N12LSGATMA1TRENCH >=100V PG-TDSON-8 Infineon Technologies |
2,427 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Ta), 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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IPB65R660CFDAATMA1MOSFET N-CH 650V 6A D2PAK Infineon Technologies |
4,016 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20 nC @ 10 V | ±20V | 543 pF @ 100 V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPB054N08N3GATMA1MOSFET N-CH 80V 80A D2PAK Infineon Technologies |
3,633 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.4mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF100B202MOSFET N-CH 100V 97A TO220AB Infineon Technologies |
1,919 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 8.6mOhm @ 58A, 10V | 4V @ 150µA | 116 nC @ 10 V | ±20V | 4476 pF @ 50 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BSZ014NE2LS5IFATMA1MOSFET N-CH 25V 31A/40A TSDSON Infineon Technologies |
26,690 | - |
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规格书 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 31A (Ta), 40A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2V @ 250µA | 33 nC @ 10 V | ±16V | 2300 pF @ 12 V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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IPD60R280CFD7ATMA1MOSFET N-CH 600V 9A TO252-3 Infineon Technologies |
4,544 | - |
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规格书 |
CoolMOS™ CFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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SPD08N50C3ATMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
12,119 | - |
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规格书 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
