上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC152N10NSFGN-CHANNEL POWER MOSFET Infineon Technologies |
9,249 | - |
|
规格书 |
OptiMOS™ 2 | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Ta), 63A (Tc) | 10V | 15.2mOhm @ 25A, 10V | 4V @ 72µA | 29 nC @ 10 V | ±20V | 1900 pF @ 50 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
SPP06N60C3XKSA1SPP06N60 - 600V COOLMOS N-CHANNE Infineon Technologies |
3,964 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB22N03S4L15ATMA1MOSFET N-CH 30V 22A TO263-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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AUIRFN7107TRAUIRFN7107 - 75V-100V N-CHANNEL Infineon Technologies |
8,000 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 77 nC @ 10 V | ±20V | 3001 pF @ 25 V | - | 4.4W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
SPP80N03S2-03MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRF4104MOSFET N-CH 40V 75A TO220 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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SPD03N60S5BTMA1MOSFET N-CH 600V 3.2A TO252-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IRL2505PBFMOSFET N-CH 55V 104A TO220AB Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPI100N06S3L-03MOSFET N-CH 55V 100A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | 2.2V @ 230µA | 550 nC @ 10 V | ±16V | 26240 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
BTS247ZN-CHANNEL POWER MOSFET Infineon Technologies |
12,634 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
