上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP80N06S2L06AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPA50R299CPXKSA1MOSFET N-CH 550V 12A TO220-FP Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IPB034N06N3GN-CHANNEL POWER MOSFET Infineon Technologies |
3,146 | - |
|
规格书 |
OptiMOS™ 3 | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 4V @ 93µA | 130 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPI80N06S2L11AKSA2MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
20,500 | - |
|
规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IRFHM8326TRPBFMOSFET N-CH 30V 25A PQFN Infineon Technologies |
7,075 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta) | 4.5V, 10V | 4.7mOhm @ 20A, 10V | 2.2V @ 50µA | 39 nC @ 10 V | ±20V | 2496 pF @ 10 V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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IPP50R299CPXKSA1MOSFET N-CH 550V 12A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRFHM8326TRPBFXTMA1TRENCH <= 40V Infineon Technologies |
3,996 | - |
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规格书 |
HEXFET® | 8-WDFN Exposed Pad | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 25A (Tc) | 4.5V, 10V | 4.7mOhm @ 20A, 10V | 2.2V @ 50µA | 39 nC @ 10 V | ±20V | 2496 pF @ 10 V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.1x3.1) |
|
IPP070N08N3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
7,700 | - |
|
规格书 |
OptiMOS™ 3 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
AUIRLZ44ZMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36 nC @ 5 V | ±16V | 1620 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPB50R299CPATMA1MOSFET N-CH 550V 12A TO263-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
