制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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IPB50CN10NGATMA1MOSFET N-CH 100V 20A TO263-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 50mOhm @ 20A, 10V | 4V @ 20µA | 16 nC @ 10 V | ±20V | 1090 pF @ 50 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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AUIRFC8407TRAUTOMOTIVE POWER MOSFET Infineon Technologies |
2,064 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF7421D1TRPBFMOSFET N-CH 30V 5.8A 8SO Infineon Technologies |
1,389 | - |
|
![]() 规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 35mOhm @ 4.1A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 510 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRLML6302TRPBFMOSFET P-CH 20V 780MA SOT23 Infineon Technologies |
151,535 | - |
|
![]() 规格书 |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 780mA (Ta) | 2.7V, 4.5V | 600mOhm @ 610mA, 4.5V | 1.5V @ 250µA | 3.6 nC @ 4.45 V | ±12V | 97 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
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IPU80R1K0CEBKMA1MOSFET N-CH 800V 5.7A TO251-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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BSL307SPL6327HTSA1MOSFET P-CH 30V 5.5A TSOP-6 Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29 nC @ 10 V | ±20V | 805 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BUZ32HXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
7,393 | - |
|
![]() 规格书 |
SIPMOS® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | 10V | 400mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB05N03LAMOSFET N-CH 25V 80A TO263-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 4.6mOhm @ 55A, 10V | 2V @ 50µA | 25 nC @ 5 V | ±20V | 3110 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPP60R600P6XKSA1MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ P6 | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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SPP03N60S5XKSA1LOW POWER_LEGACY Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |