制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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BUZ101LN-CHANNEL POWER MOSFET Infineon Technologies |
5,075 | - |
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![]() 规格书 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPSA70R750P7SAKMA1MOSFET N-CH 700V 6.5A TO251-3 Infineon Technologies |
0 | - |
|
![]() 规格书 |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3 nC @ 400 V | ±16V | 306 pF @ 400 V | - | 34.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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BSP88E6327MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
0 | - |
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![]() 规格书 |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 2.8V, 4.5V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8 nC @ 10 V | ±20V | 95 pF @ 25 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IPU60R2K0C6BKMA1MOSFET N-CH 600V 2.4A TO251-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPS70R1K4CEAKMA1MOSFET N-CH 700V 5.4A TO251 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.4A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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IPU60R1K4C6AKMA1MOSFET N-CH 600V 3.2A TO251-3 Infineon Technologies |
0 | - |
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CoolMOS™ C6 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPSA70R950CEAKMA1MOSFET N-CH 700V 8.7A TO251-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
- | TO-251-3 Stub Leads, IPAK | Bulk | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 700 V | 8.7A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 94W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-347 |
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SPS01N60C3MOSFET N-CH 650V 800MA TO251-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5 nC @ 10 V | ±20V | 100 pF @ 25 V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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IPS60R1K0PFD7SAKMA1MOSFET N-CH 650V 4.7A TO251-3 Infineon Technologies |
0 | - |
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![]() 规格书 |
CoolMOS™PFD7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.7A (Tc) | 10V | 1Ohm @ 1A, 10V | 4.5V @ 50µA | 6 nC @ 10 V | ±20V | 230 pF @ 400 V | - | 26W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPA50R650CEXKSA2MOSFET N-CH 500V 4.6A TO220 Infineon Technologies |
0 | - |
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CoolMOS™ CE | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.6A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15 nC @ 10 V | ±20V | 342 pF @ 100 V | - | 27.2W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |