场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTC90TAM60TPG

    APTC90TAM60TPG

    MOSFET 6N-CH 900V 59A SP6-P

    Microsemi Corporation

    0

    -

    CoolMOS™ SP6 Tray Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 900V 59A 60mOhm @ 52A, 10V 3.5V @ 6mA 540nC @ 10V 13600pF @ 100V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    JAN2N7334

    JAN2N7334

    MOSFET 4N-CH 100V 1A MO-036AB

    Microsemi Corporation

    0
    JAN2N7334

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Active MOSFET (Metal Oxide) 4 N-Channel - 100V 1A 700mOhm @ 600mA, 10V 4V @ 250µA 60nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/597 Through Hole MO-036AB
    JAN2N7335

    JAN2N7335

    MOSFET 4P-CH 100V 0.75A

    Microsemi Corporation

    0
    JAN2N7335

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole -
    JANTX2N7335

    JANTX2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    0
    JANTX2N7335

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole MO-036AB
    JANTXV2N7334

    JANTXV2N7334

    MOSFET 4N-CH 100V 1A MO-036AB

    Microsemi Corporation

    0
    JANTXV2N7334

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Active MOSFET (Metal Oxide) 4 N-Channel - 100V 1A 700mOhm @ 600mA, 10V 4V @ 250µA 60nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/597 Through Hole MO-036AB
    JANTXV2N7335

    JANTXV2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    0
    JANTXV2N7335

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) Military MIL-PRF-19500/599 Through Hole MO-036AB
    2N7335

    2N7335

    MOSFET 4P-CH 100V 0.75A MO-036AB

    Microsemi Corporation

    0
    2N7335

    规格书

    - 14-DIP (0.300", 7.62mm) Bulk Obsolete MOSFET (Metal Oxide) 4 P-Channel - 100V 750mA 1.4Ohm @ 500mA, 10V 4V @ 250µA - - 1.4W -55°C ~ 150°C (TJ) - - Through Hole MO-036AB
    APTSM120AM08CT6AG

    APTSM120AM08CT6AG

    MOSFET 2N-CH 1200V 370A SP6

    Microsemi Corporation

    0

    -

    - SP6 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual), Schottky - 1200V (1.2kV) 370A (Tc) 10mOhm @ 200A, 20V 3V @ 10mA 1360nC @ 20V - 2300W -40°C ~ 175°C (TJ) - - Chassis Mount SP6
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