场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTC80DDA29T3G

    APTC80DDA29T3G

    MOSFET 2N-CH 800V 15A SP3

    Microsemi Corporation

    0
    APTC80DDA29T3G

    规格书

    - SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 800V 15A 290mOhm @ 7.5A, 10V 3.9V @ 1mA 90nC @ 10V 2254pF @ 25V 156W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC80DSK15T3G

    APTC80DSK15T3G

    MOSFET 2N-CH 800V 28A SP3

    Microsemi Corporation

    0

    -

    - SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTM50DHM65T3G

    APTM50DHM65T3G

    MOSFET 2N-CH 500V 51A SP3

    Microsemi Corporation

    0

    -

    POWER MOS 8™ SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 500V 51A 78mOhm @ 42A, 10V 5V @ 2.5mA 340nC @ 10V 10800pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC60AM42F2G

    APTC60AM42F2G

    MOSFET 2N-CH 600V 66A SP2

    Microsemi Corporation

    0
    APTC60AM42F2G

    规格书

    CoolMOS™ SP2 Tray Obsolete MOSFET (Metal Oxide) 2 N Channel (Phase Leg) - 600V 66A 42mOhm @ 33A, 10V 5V @ 6mA 510nC @ 10V 14600pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP2
    APTM60A23FT1G

    APTM60A23FT1G

    MOSFET 2N-CH 600V 20A SP1

    Microsemi Corporation

    0
    APTM60A23FT1G

    规格书

    - SP1 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 20A 276mOhm @ 17A, 10V 5V @ 1mA 165nC @ 10V 5316pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM100H80FT1G

    APTM100H80FT1G

    MOSFET 4N-CH 1000V 11A SP1

    Microsemi Corporation

    0
    APTM100H80FT1G

    规格书

    - SP1 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 11A 960mOhm @ 9A, 10V 5V @ 1mA 150nC @ 10V 3876pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM20DHM16T3G

    APTM20DHM16T3G

    MOSFET 2N-CH 200V 104A SP3

    Microsemi Corporation

    0

    -

    POWER MOS 7® SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 200V 104A 19mOhm @ 52A, 10V 5V @ 2.5mA 140nC @ 10V 7220pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC90DDA12T1G

    APTC90DDA12T1G

    MOSFET 2N-CH 900V 30A SP1

    Microsemi Corporation

    0
    APTC90DDA12T1G

    规格书

    CoolMOS™ SP1 Tray Obsolete MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 900V 30A 120mOhm @ 26A, 10V 3.5V @ 3mA 270nC @ 10V 6800pF @ 100V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC90DSK12T1G

    APTC90DSK12T1G

    MOSFET 2N-CH 900V 30A SP1

    Microsemi Corporation

    0
    APTC90DSK12T1G

    规格书

    CoolMOS™ SP1 Tray Obsolete MOSFET (Metal Oxide) 2 N Channel (Dual Buck Chopper) - 900V 30A 120mOhm @ 26A, 10V 3.5V @ 3mA 270nC @ 10V 6800pF @ 100V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM10DHM09T3G

    APTM10DHM09T3G

    MOSFET 2N-CH 100V 139A SP3

    Microsemi Corporation

    0

    -

    POWER MOS V® SP3 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
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