场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    SMA5117

    SMA5117

    MOSFET 6N-CH 250V 7A 12SIP

    Sanken Electric USA Inc.

    10
    SMA5117

    规格书

    - 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 7A 250mOhm @ 3.5A, 10V 4V @ 1mA - 850pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
    ALD114804ASCL

    ALD114804ASCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD114804ASCL

    规格书

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD114904APAL

    ALD114904APAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    0
    ALD114904APAL

    规格书

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD114804PCL

    ALD114804PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD114804PCL

    规格书

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD114813PCL

    ALD114813PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD114813PCL

    规格书

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD310700PCL

    ALD310700PCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD310700PCL

    规格书

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD310702PCL

    ALD310702PCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD310702PCL

    规格书

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD210800PCL

    ALD210800PCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD210800PCL

    规格书

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD212914PAL

    ALD212914PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    0

    -

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Through Hole 8-PDIP
    ALD310700ASCL

    ALD310700ASCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD310700ASCL

    规格书

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD310702ASCL

    ALD310702ASCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD310702ASCL

    规格书

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD310704ASCL

    ALD310704ASCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD310704ASCL

    规格书

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD310708ASCL

    ALD310708ASCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD310708ASCL

    规格书

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD210808ASCL

    ALD210808ASCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    0
    ALD210808ASCL

    规格书

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD212908ASAL

    ALD212908ASAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    0
    ALD212908ASAL

    规格书

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    SLA5061

    SLA5061

    MOSFET 3N/3P-CH 60V 10A/6A 12SIP

    Sanken Electric USA Inc.

    0
    SLA5061

    规格书

    - 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A, 6A 140mOhm @ 5A, 4V - - 460pF @ 10V, 1200pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    ALD114835PCL

    ALD114835PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD114835PCL

    规格书

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD110908APAL

    ALD110908APAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    0
    ALD110908APAL

    规格书

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    SLA5075

    SLA5075

    MOSFET 6N-CH 500V 5A 15ZIP

    Sanken Electric USA Inc.

    0
    SLA5075

    规格书

    - 15-SIP Exposed Tab, Formed Leads Tube Not For New Designs MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
    ALD210808APCL

    ALD210808APCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    0
    ALD210808APCL

    规格书

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    首页

    首页

    产品中心

    产品中心

    电话

    电话

    会员中心

    会员中心