图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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ALD1110EPALMOSFET 2N-CH 10V 8PDIP |
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EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD1110ESALMOSFET 2N-CH 10V 8SOIC |
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EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 2.5pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD110808PCLMOSFET 4N-CH 10.6V 16PDIP |
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EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD310700SCLMOSFET 4P-CH 8V 16SOIC |
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![]() 规格书 |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
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ALD310702SCLMOSFET 4P-CH 8V 16SOIC |
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EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
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ALD310704SCLMOSFET 4P-CH 8V 16SOIC |
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EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
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ALD114935PALMOSFET 2N-CH 10.6V 8PDIP |
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EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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FDMD8280MOSFET 2N-CH 80V 11A 12POWER |
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PowerTrench® | 12-PowerWDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 80V | 11A | 8.2mOhm @ 11A, 10V | 4V @ 250µA | 44nC @ 10V | 3050pF @ 40V | 1W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 12-Power3.3x5 |
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ALD114904ASALMOSFET 2N-CH 10.6V 8SOIC |
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EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD210802PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
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EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD210804PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
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EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD210814PCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
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EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | - | - | - | - | Through Hole | 16-PDIP |
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ALD212900ASALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
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EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD110802PCLMOSFET 4N-CH 10.6V 16PDIP |
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EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD110804PCLMOSFET 4N-CH 10.6V 16PDIP |
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EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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ALD110814PCLMOSFET 4N-CH 10.6V 16PDIP |
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EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
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SLA5068 LF853MOSFET 6N-CH 60V 7A 15SIP |
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- | 15-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 15-SIP |
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ALD1102BSALMOSFET 2P-CH 10.6V 8SOIC |
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- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD1101BSALMOSFET 2N-CH 10.6V 0.04A 8SOIC |
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- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 40mA | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD212914SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
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EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | - | - | Surface Mount | 8-SOIC |