场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    NXH040P120MNF1PG

    NXH040P120MNF1PG

    MOSFET 2N-CH 1200V 30A

    onsemi

    28
    NXH040P120MNF1PG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH008P120M3F1PTG

    NXH008P120M3F1PTG

    MOSFET 2N-CH 1200V 145A

    onsemi

    27
    NXH008P120M3F1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH010P120MNF1PTNG

    NXH010P120MNF1PTNG

    MOSFET 2N-CH 1200V 114A

    onsemi

    28
    NXH010P120MNF1PTNG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH020F120MNF1PG

    NXH020F120MNF1PG

    MOSFET 4N-CH 1200V 51A 22PIM

    onsemi

    28
    NXH020F120MNF1PG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    NXH004P120M3F2PTNG

    NXH004P120M3F2PTNG

    MOSFET 2N-CH 1200V 338A 36PIM

    onsemi

    40
    NXH004P120M3F2PTNG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 338A (Tj) 5.5mOhm @ 200A, 18V 4.4V @ 120mA 876nC @ 20V 16410pF @ 800V 1.1kW (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    NTK3142PT1H-ON

    NTK3142PT1H-ON

    MOSFET P-CH

    onsemi

    100,800

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    EFC4601-M-TR-ON

    EFC4601-M-TR-ON

    MOSFET N-CH

    onsemi

    1,895,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    SCH2822-TL-E

    SCH2822-TL-E

    PCH+SBD 2.5V DRIVE SERIES

    onsemi

    170,000

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    2SB808F-SPA-ON

    2SB808F-SPA-ON

    MOSFET N-CH

    onsemi

    35,003

    -

    * - Bulk Active - - - - - - - - - - - - - - -
    FDS6900AS-G

    FDS6900AS-G

    MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

    onsemi

    0

    -

    PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.9A, 8.2A 27mOhm @ 6.9A, 10V 3V @ 250µA, 3V @ 1mA 15nC @ 10V 600pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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