场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    NTTFD018N08LC

    NTTFD018N08LC

    MOSFET 2N-CH 80V 6A 12WQFN

    onsemi

    2,945
    NTTFD018N08LC

    规格书

    - 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 6A (Ta), 26A (Tc) 18mOhm @ 7.8A, 10V 2.5V @ 44µA 12.4nC @ 10V 856pF @ 40V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
    NTTFD021N08C

    NTTFD021N08C

    MOSFET 2N-CH 80V 6A 12WQFN

    onsemi

    2,611
    NTTFD021N08C

    规格书

    - 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 6A (Ta), 24A (Tc) 21mOhm @ 7.8A, 10V 4V @ 44µA 8.4nC @ 10V 572pF @ 40V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
    NTTFD022N10C

    NTTFD022N10C

    MOSFET 2N-CH 100V 6A 12WQFN

    onsemi

    2,980
    NTTFD022N10C

    规格书

    - 12-PowerWQFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 6A (Ta), 24A (Tc) 25mOhm @ 7.8A, 10V 4V @ 44µA 9nC @ 10V 585pF @ 50V 1.7W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 12-WQFN (3.3x3.3)
    NVMFD5C446NWFT1G

    NVMFD5C446NWFT1G

    MOSFET 2N-CH 40V 24A 8DFN

    onsemi

    2,965
    NVMFD5C446NWFT1G

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 24A (Ta), 127A (Tc) 2.9mOhm @ 30A, 10V 3.5V @ 250µA 38nC @ 10V 2450pF @ 25V 3.2W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NXV08A170DB2

    NXV08A170DB2

    MOSFET 2N-CH 80V 200A APM12-CBA

    onsemi

    238
    NXV08A170DB2

    规格书

    - 12-PowerDIP Module (1.118", 28.40mm) Tray Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 80V 200A (Tj) 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V 4V @ 250µA 195nC @ 10V 14000pF @ 40V - 175°C (TJ) Automotive AEC-Q100 Through Hole APM12-CBA
    NVXK2TR40WXT

    NVXK2TR40WXT

    MOSFET 4N-CH 1200V 27A APM32

    onsemi

    60
    NVXK2TR40WXT

    规格书

    - 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 27A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    NXH030F120M3F1PTG

    NXH030F120M3F1PTG

    MOSFET 4N-CH 1200V 38A 22PIM

    onsemi

    26
    NXH030F120M3F1PTG

    规格书

    - Module Tray Active SiCFET (Silicon Carbide) 4 N-Channel (Full Bridge) Depletion Mode 1200V (1.2kV) 38A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2246pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    NXH010P120M3F1PG

    NXH010P120M3F1PG

    MOSFET 2N-CH 1200V 105A

    onsemi

    28
    NXH010P120M3F1PG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH010P120M3F1PTG

    NXH010P120M3F1PTG

    MOSFET 2N-CH 1200V 105A

    onsemi

    27
    NXH010P120M3F1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 14.5mOhm @ 90A, 18V 4.4V @ 45mA 314nC @ 18V 6451pF @ 800V 272W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH030P120M3F1PTG

    NXH030P120M3F1PTG

    MOSFET 2N-CH 1200V 42A

    onsemi

    28
    NXH030P120M3F1PTG

    规格书

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 42A (Tc) 38.5mOhm @ 30A, 18V 4.4V @ 15mA 110nC @ 18V 2271pF @ 800V 100W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
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