场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    IPG20N04S412AATMA1

    IPG20N04S412AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    28,528
    IPG20N04S412AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A 12.2mOhm @ 17A, 10V 4V @ 15µA 18nC @ 10V 1470pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IPG20N06S4L26AATMA1

    IPG20N06S4L26AATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    4,717
    IPG20N06S4L26AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A 26mOhm @ 17A, 10V 2.2V @ 10µA 20nC @ 10V 1430pF @ 25V 33W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IPG20N06S2L35ATMA1

    IPG20N06S2L35ATMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    14,440
    IPG20N06S2L35ATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A 35mOhm @ 15A, 10V 2V @ 27µA 23nC @ 10V 790pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N06S2L35AATMA1

    IPG20N06S2L35AATMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    14,700
    IPG20N06S2L35AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 35mOhm @ 15A, 10V 2V @ 27µA 23nC @ 10V 790pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IPG20N10S4L35AATMA1

    IPG20N10S4L35AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON

    Infineon Technologies

    3,095
    IPG20N10S4L35AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 20A 35mOhm @ 17A, 10V 2.1V @ 16µA 17.4nC @ 10V 1105pF @ 25V 43W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    BSC0993NDATMA1

    BSC0993NDATMA1

    MOSFET 2N-CH 17A TISON8

    Infineon Technologies

    5,035
    BSC0993NDATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel - - 17A (Ta) 5mOhm @ 7A, 10V 2V @ 250µA - - - -55°C ~ 150°C (TJ) - - Surface Mount PG-TISON-8
    BSC0911NDATMA1

    BSC0911NDATMA1

    MOSFET 2N-CH 25V 18A/30A TISON8

    Infineon Technologies

    9,890
    BSC0911NDATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 4.5V Drive 25V 18A, 30A 3.2mOhm @ 20A, 10V 2V @ 250µA 12nC @ 4.5V 1600pF @ 12V 1W -55°C ~ 150°C (TJ) - - Surface Mount PG-TISON-8
    BSC076N04NDATMA1

    BSC076N04NDATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    4,460
    BSC076N04NDATMA1

    规格书

    OptiMOS™ T2 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A (Tc) 7.6mOhm @ 17A, 10V 4V @ 30µA 38nC @ 10V 2950pF @ 20V 2.3W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-4
    IAUC60N04S6L030HATMA1

    IAUC60N04S6L030HATMA1

    MOSFET 2N-CH 40V 60A 8TDSON

    Infineon Technologies

    0
    IAUC60N04S6L030HATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 60A (Tj) 3mOhm @ 30A, 10V 2V @ 25µA 35nC @ 10V 2128pF @ 25V 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-56
    BSC0910NDIATMA1

    BSC0910NDIATMA1

    MOSFET 2N-CH 25V 11A/31A TISON8

    Infineon Technologies

    10,482
    BSC0910NDIATMA1

    规格书

    OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 4.5V Drive 25V 11A, 31A 4.6mOhm @ 25A, 10V 2V @ 250µA 6.6nC @ 4.5V 4500pF @ 12V 1W -55°C ~ 150°C (TJ) - - Surface Mount PG-TISON-8
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