场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    ISA150233C03LMDSXTMA

    ISA150233C03LMDSXTMA

    ISA150233C03LMDSXTMA

    Infineon Technologies

    500
    ISA150233C03LMDSXTMA

    规格书

    OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc) 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V 2.7V @ 1mA 19nC @ 10V, 32nC @ 10V 1300pF @ 15V, 2300pF @ 15V 1.4W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-920
    IPG20N04S409AATMA1

    IPG20N04S409AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    4,200
    IPG20N04S409AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A (Tc) 8.6mOhm @ 17A, 10V 4V @ 22µA 28nC @ 10V 2250pF @ 25V 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N04S4L08AATMA1

    IPG20N04S4L08AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    3,985
    IPG20N04S4L08AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 8.2mOhm @ 17A, 10V 2.2V @ 22µA 39nC @ 10V 3050pF @ 25V 54W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IAUCN10S5L094DATMA1

    IAUCN10S5L094DATMA1

    MOSFET 2N-CH 100V 66A 8TDSON

    Infineon Technologies

    4,734

    -

    OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 66A (Tj) 9.4mOhm @ 30A, 10V 2.2V @ 35µA 30nC @ 10V 2180pF @ 50V 96W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-60
    IPG20N06S4L14ATMA2

    IPG20N06S4L14ATMA2

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    8,950
    IPG20N06S4L14ATMA2

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A 13.7mOhm @ 17A, 10V 2.2V @ 20µA 39nC @ 10V 2890pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N06S4L11AATMA1

    IPG20N06S4L11AATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    1,590
    IPG20N06S4L11AATMA1

    规格书

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A 11.2mOhm @ 17A, 10V 2.2V @ 28µA 53nC @ 10V 4020pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IQE220N15NM5CGSCATMA1

    IQE220N15NM5CGSCATMA1

    MOSFET 2N-CH 150V 9WHTFN

    Infineon Technologies

    6,000
    IQE220N15NM5CGSCATMA1

    规格书

    OptiMOS™ 9-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 150V - - - - - - - - - Surface Mount PG-WHTFN-9
    IQE008N03LM5CGSCATMA1

    IQE008N03LM5CGSCATMA1

    MOSFET 2N-CH 30V 9WHTFN

    Infineon Technologies

    6,000
    IQE008N03LM5CGSCATMA1

    规格书

    OptiMOS™ 9-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 30V - - - - - - - - - Surface Mount PG-WHTFN-9
    IQE008N03LM5SCATMA1

    IQE008N03LM5SCATMA1

    MOSFET 2N-CH 30V 8WHSON

    Infineon Technologies

    5,997
    IQE008N03LM5SCATMA1

    规格书

    OptiMOS™ 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 30V - - - - - - - - - Surface Mount PG-WHSON-8
    BSG0813NDIATMA1

    BSG0813NDIATMA1

    MOSFET 2N-CH 25V 19A/33A TISON8

    Infineon Technologies

    4,918
    BSG0813NDIATMA1

    规格书

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 4.5V Drive 25V 19A, 33A 3mOhm @ 20A, 10V 2V @ 250µA 8.4nC @ 4.5V 1100pF @ 12V 2.5W -55°C ~ 155°C (TJ) - - Surface Mount PG-TISON-8
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