图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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STPSC606DDIODE SIL CARB 600V 6A TO220AC STMicroelectronics |
17 |
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![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 600 V | 375pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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BYT30P-1000DIODE GEN PURP 1KV 30A SOD93-2 STMicroelectronics |
0 |
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![]() 规格书 |
- | SOD-93-2 | Tube | Obsolete | Standard | 1000 V | 30A | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | - | - | Through Hole | SOD-93-2 | -40°C ~ 150°C |
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BYT30PI-1000RGDIODE GEN PURP 1KV 30A DOP3I STMicroelectronics |
0 |
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![]() 规格书 |
- | DOP3I-2 Insulated (Straight Leads) | Tube | Obsolete | Standard | 1000 V | 30A | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | - | - | Through Hole | DOP3I | -40°C ~ 150°C |
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STPSC10H065DLFDIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics |
0 |
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![]() 规格书 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 595pF @ 0V, 1MHz | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
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STPSC806G-TRDIODE SIL CARBIDE 600V 8A D2PAK STMicroelectronics |
0 |
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![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 450pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
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STPSC10H12B-TR1DIODE SIL CARBIDE 1.2KV 10A DPAK STMicroelectronics |
0 |
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![]() 规格书 |
ECOPACK® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
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STPSC1006G-TRDIODE SIL CARBIDE 600V 10A D2PAK STMicroelectronics |
0 |
|
![]() 规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
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BHK3012TVDIODE GEN PURP 1.2KV ISOTOP STMicroelectronics |
0 |
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- |
- | ISOTOP | Bulk | Obsolete | Standard | 1200 V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | - | - | Chassis Mount | ISOTOP® | - |
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STTA2006PIDIODE GEN PURP 600V 20A DOP3I STMicroelectronics |
0 |
|
- |
TURBOSWITCH™ | DOP3I-2 Insulated (Straight Leads) | Bulk | Obsolete | Standard | 600 V | 20A | 1.75 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 100 µA @ 600 V | - | - | - | Through Hole | DOP3I | 150°C (Max) |
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STTA806DIDIODE GP 600V 8A TO220AC INS STMicroelectronics |
0 |
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![]() 规格书 |
TURBOSWITCH™ | TO-220-2 Insulated, TO-220AC | Bulk | Obsolete | Standard | 600 V | 8A | 1.75 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 52 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-220AC ins | 150°C (Max) |