图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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1N3611DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
341 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N3611DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
356 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5806DIODE GEN PURP 150V 1A AXIAL Microchip Technology |
149 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5804DIODE GEN PURP 100V 1A AXIAL Microchip Technology |
299 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
APT60S20SGDIODE SCHOTTKY 200V 75A D3 Microchip Technology |
187 |
|
![]() 规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Schottky | 200 V | 75A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 1 mA @ 200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 150°C |
|
1N5614USDIODE GEN PURP 200V 1A D-5A Microchip Technology |
250 |
|
![]() 规格书 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
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1N5550DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
262 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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1N5802DIODE GEN PURP 50V 1A AXIAL Microchip Technology |
298 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
198 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N5417DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
204 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |