图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6642USDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
1,066 |
|
![]() 规格书 |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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CDLL5819/TRDIODE SCHOTTKY 45V 1A DO213AA Microchip Technology |
256 |
|
![]() 规格书 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
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1N5418DIODE GEN PURP 400V 3A B SQ-MELF Microchip Technology |
384 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
210 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
132 |
|
![]() 规格书 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 410 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
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1N5811USDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
815 |
|
![]() 规格书 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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1N6638USDIODE GEN PURP 125V 300MA D-5D Microchip Technology |
541 |
|
![]() 规格书 |
- | SQ-MELF, D | Bulk | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | 2.5pF @ 0V, 1MHz | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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JAN1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
175 |
|
![]() 规格书 |
- | DO-213AB, MELF (Glass) | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
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1N5809USDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
629 |
|
![]() 规格书 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANTX1N5811USDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
116 |
|
![]() 规格书 |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |