图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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1N5416DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
0 |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTX1N5811DIODE GEN PURP 150V 3A AXIAL Microchip Technology |
22 |
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![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N6640USDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
0 |
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![]() 规格书 |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | - | - | Surface Mount | D-5D | -65°C ~ 175°C |
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1N6677UR-1DIODE SCHOTTKY 40V 200MA DO213AA Microchip Technology |
0 |
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![]() 规格书 |
- | DO-213AA | Bulk | Active | Schottky | 40 V | 200mA | 500 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 40 V | 50pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 125°C |
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JAN1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
0 |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
0 |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
0 |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N4942DIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
0 |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | Military | MIL-PRF-19500/359 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N3612DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
2 |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANTX1N5552DIODE GEN PURP 600V 5A AXIAL Microchip Technology |
0 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 600 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |