图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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JANHCA1N6761DIODE SCHOTTKY 100V 1A DO41 Microchip Technology |
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![]() 规格书 |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Schottky | 100 V | 1A | 690 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | - | - | Through Hole | DO-41 | -55°C ~ 125°C |
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JANS1N5802DIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
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- | A, Axial | Bulk | Active | Standard | 50 V | 2A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5804DIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
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- | A, Axial | Bulk | Active | Standard | 100 V | 2A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N6643USDIODE GP 50V 300MA B SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | - | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANS1N6643UDIODE GEN PURP 125V 300MA D-5B Microchip Technology |
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- | SQ-MELF, E | Bulk | Active | Standard | 125 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 150 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
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JANS1N5804/TRDIODE GEN PURP 100V 2A A AXIAL Microchip Technology |
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![]() 规格书 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 2A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5802/TRDIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
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![]() 规格书 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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JANS1N5806/TRDIODE GEN PURP 150V 1A Microchip Technology |
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![]() 规格书 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
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1N6078USDIODE GEN PURP 150V 6A D-5B Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, E | Bulk | Active | Standard | 150 V | 6A | 1.76 V @ 18.8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | - | - | - | Surface Mount | D-5B | -65°C ~ 155°C |
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1N6079USDIODE GEN PURP 50V 2A G-MELF Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, G | Bulk | Active | Standard | 50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | - | - | Surface Mount | G-MELF (D-5C) | -65°C ~ 155°C |