图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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JAN1N5804URS/TRUFR,FRR Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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JAN1N5802URS/TRUFR,FRR Microchip Technology |
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![]() 规格书 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N6631U/TRDIODE GEN PURP 1KV 1.4A D-5B Microchip Technology |
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- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 1000 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1 V | - | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
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JANTX1N6631US/TRDIODE GEN PURP 1.1KV 1.4A D-5B Microchip Technology |
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- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 1100 V | 1.4A | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
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JAN1N5711UB/TRSMALL-SIGNAL SCHOTTKY Microchip Technology |
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![]() 规格书 |
- | 3-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | UB | -65°C ~ 150°C |
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JANTXV1N6624DIODE GEN PURP 990V 1A A-PAK Microchip Technology |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 990 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | - | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
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JANTX1N6622/TRDIODE GEN PURP 660V 2A Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
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JANTX1N6622DIODE GEN PURP 660V 2A AXIAL Microchip Technology |
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![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 660 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
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JANTXV1N6624/TRDIODE GEN PURP 990V 1A A-PAK Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 990 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | - | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
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UES1002/TRDIODE GEN PURP 100V 1A Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |