图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
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1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
338 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
624 |
|
![]() 规格书 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
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APT15DQ120BHBGDIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology |
101 |
|
![]() 规格书 |
- | TO-247-3 | Tube | Active | Standard | 1200 V | 15A | 3.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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MSC030SDA070KDIODE SIL CARB 700V 30A TO220-2 Microchip Technology |
119 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
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MSC015SDA120BDIODE SCHOTTKY 1.2KV 15A TO247 Microchip Technology |
134 |
|
![]() 规格书 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
|
JANTX1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
141 |
|
![]() 规格书 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-S-19500-241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
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MSC020SDA120KDIODE SIL CARB 1.2KV 49A TO220-2 Microchip Technology |
105 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UES1104DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
105 |
|
![]() 规格书 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | - | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
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MNS1N6627US/TRDIODE GEN PURP 440V 1.75A E-MELF Microchip Technology |
483 |
|
![]() 规格书 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 440 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 150°C |
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1N4153UR/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
610 |
|
![]() 规格书 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |